Korea's SK hynix has achieved a significant milestone by becoming the first manufacturer to mass produce a 36 GB 12-layer HBM3E chip, expected to be available to customers by year-end. This new chip design, featuring a stacked configuration of DRAM, addresses the growing demands of AI, GPUs, and supercomputers, increasing memory capacity by 50 percent while maintaining the same thickness as previous generations.
The company's innovation includes treating the fragile thin layers of the new HBM3E chips with an Advanced MR-MUF process, which involves injecting liquid protective materials among the stacked chips. This technique is designed to strengthen the circuits and improve heat dissipation, a critical requirement given the higher operational speeds reached by the new memory product.
This latest HBM3E chip boasts a memory operation speed of 9.6 Gbps, the fastest in the market today. With such capabilities, a single GPU powered by four of these chips can process a staggering 70 billion parameters 35 times per second, showcasing the chip's exceptional performance in advanced AI applications.
Prior to this launch, SK hynix's maximum capacity was 24 GB HBM3E, achieved just six months ago. The rapid advancements in production underline the pressing demand for high-bandwidth memory solutions in the AI sector, with market analysts earlier warning of supply shortages as companies shifted resources to develop these advanced memory technologies.
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