The article discusses the advancements in spontaneous parametric down-conversion (SPDC) using high-quality factor Si 3N 4 resonators, which enable high pair generation rates of up to 0.8 million pairs per second. It highlights the advantages of using thin films of non-centrosymmetric materials in integrated photonics and addresses the challenges posed by the weak nonlinearities of the photogalvanic-induced χ(2). By implementing SPDC in Si 3N 4 systems, the authors emphasize the potential for photonic integration and efficient quantum source development.
The implementation of SPDC in high Q factor Si 3N 4 resonators enables unprecedented pair generation rates of up to 0.8 million pairs per second, making it distinctively efficient.
While the application of the photogalvanic effect in Si 3N 4 systems presents challenges due to weak nonlinearity, overcoming these could revolutionize photonic integration.
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