In Kim's study, the team emphasizes the need to develop a doping process for TMDs that can operate below 400 Celsius, a critical step for high-performing chips.
"Doping substitutes atoms of a host metal with foreign atoms, but doing this with materials only one atom thick poses significant challenges," Kim explained regarding TMD semiconductors.
"A heat sink area is needed in devices like that. This is also something we plan to do in the future-developing a new cooling scheme for such chips," Kim stated.
Kim believes that overcoming these challenges can lead to practical 3D stacked chips based on 2D semiconductors, potentially marking a significant shift from silicon chips.
Collection
[
|
...
]