The interplay between GaN and Mg is crucial for improving carrier mobility in semiconductors. 2D-Mg intercalation into GaN forms unique superlattices, enhancing performance.
Achieving high elastic strain in GaN to modify the band structure and enhance carrier mobility remains challenging. Intercalation of atomic sheets into wide-bandgap semiconductors, like GaN, is typically difficult.
#gallium-nitride #magnesium-intercalation #carrier-mobility #semiconductors #superlattice-structures
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