Continuously graded-doped SnO2 for efficient nip perovskite solar cells

"Conventional nip architecture remains a robust platform for scalable perovskite photovoltaics, yet its steady-state efficiency has stagnated at ~26%, lagging behind pin counterparts due to persistent non-radiative recombination at textured electron transport layer/perovskite interfaces."

"The performance gap arises from the synergistic combination of band misalignment and electron accumulation at the buried interface, which has remained unclear until now."

"To address this dual challenge, we develop a continuously graded n+/n-doped SnO2 ETL through a ligand-competitive binding strategy, enabling spatially defined doping that creates a built-in electric field."

"This graded architecture simultaneously minimizes band offset and accelerates electron extraction, effectively suppressing the cross-interface recombination, leading to improved efficiency in nip perovskite solar cells."

Conventional nip architecture for perovskite photovoltaics has stagnated at ~26% efficiency due to non-radiative recombination at ETL/perovskite interfaces. The losses stem from band misalignment and electron accumulation. A new graded n+/n-doped SnO2 ETL is developed using a ligand-competitive binding strategy, creating a built-in electric field. This architecture reduces band offset and accelerates electron extraction, effectively suppressing cross-interface recombination. The improved design leads to enhanced performance in nip perovskite solar cells.

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