SK hynix has unveiled the world's first 321-layer UFS 4.1 TLC NAND flash designed for smartphones. This technology is poised to significantly enhance performance, featuring 15% higher random read speeds and 40% higher random write speeds compared to the previous generation. Notably, the thickness has been reduced to 0.85mm, contributing to sleeker smartphone designs. With an emphasis on improving power efficiency by 7%, the new NAND chips are expected to boost on-device AI capabilities and multitasking. SK hynix plans to start shipping these chips in early next year, targeting capacities of 512GB and 1TB for future devices.
The new NAND flash boasts 15% higher random read and 40% higher random write speeds, making it ideal for advanced smartphones focused on slim designs and AI tools.
With power efficiency improved by 7%, this NAND flash will support better on-device AI performance and enhance multitasking capabilities across devices.
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