Samsung's QLC 9th-gen V-NAND with 1-Terabit storage has achieved twice the data writing speed and significant power consumption reductions, responding to AI storage needs.
With the new QLC V-NAND, Samsung delivers improved density by 86%, thanks to Channel Hole Etching, enhancing chip reliability and performance in advanced SSD solutions.
SungHoi Hur highlighted that the mass production aligns with the demand for high-performance SSDs in the AI era, bolstering Samsung’s leadership in storage technology.
The QLC V-NAND’s innovations like Designed Mold technology ensure uniformity across layers, improving both data retention performance and overall reliability of the chips.
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